Normale und anomale Absorption von Röntgen-Strahlen in Germanium und Silicium/Normal and anomalous absorption of X-rays in Germanium and Silicon
Normale und anomale Absorption von Röntgen-Strahlen in Germanium und Silicium/Normal and anomalous absorption of X-rays in Germanium and Silicon
复制标题
锗和硅中 X 射线的正常和反常吸收
DOI：
10.1515/zna-1973-0507
复制
发表时间：
1973
期刊：
影响因子：
--
通讯作者：
H. Wagenfeld
中科院分区：
文献类型：
--
作者：
G. Hildebrandt;J. Stephenson;H. Wagenfeld
结合Borrmann效应得到的实验数据|χ⊥ig/χi0|的解释，对莫里哀的广义动力学理论进行了简要讨论。为了比较理论和实验，在 5 至 25 keV 的 X 射线能量范围内计算了硅和锗的光电吸收截面。我们和其他作者测量的线性吸收系数与理论一致只有几个百分点。考虑到德拜-沃勒因子，使用相同的理论数据计算 |χ⊥ig/χi0 |对于Ge和Si。在大多数情况下，与 Ge 中的鲍曼效应的广泛测量的一致性非常好。本文提出的实验证实了光电效应中电四极跃迁的存在。
A brief discussion of G. Molière's generalized dynamical theory is given with respect to the interpretation of the experimental data|χ⊥ig/χi0 |obtained by means of the Borrmann effect. In order to compare theory and experiment photoelectric absorption cross sections for Silicon and Germanium have been calculated over the X-ray energy range from 5 to 25 keV. Linear absorption coefficients measured by us and other authors agree with theory within a few per cent. Taking the Debye-Waller factor into account, the same theoretical data have been used to calculate |χ⊥ig/χi0 | for Ge and Si. The agreement with extensive measurements of the Borrmann effect in Ge is very good in most cases. The experiments presented in this paper confirm the existence of the electric quadrupole transitions within the photoelectric effect.