Tunneling conductance of graphene NIS junctions.
Tunneling conductance of graphene NIS junctions.
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DOI：
10.1103/physrevlett.97.217001
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发表时间：
2006-07
影响因子：
8.6
通讯作者：
S. Bhattacharjee;K. Sengupta
中科院分区：
文献类型：
--
作者：
S. Bhattacharjee;K. Sengupta
结果表明，与常规的金属-绝缘体-超导体(NIS)结不同，NIS结在石墨烯中的隧道电导是绝缘区有效势垒强度在薄势垒极限下的振荡函数。当正常区和超导区的费米面排列时，这些振荡的幅度最大，当费米面失配较大时，这些振荡的幅度就消失了。零偏压隧道电导与传统的NIS结形成鲜明对比，在有限势垒强度下达到最大值。我们还建议进行实验来验证这些预测。
We show that, in contrast with conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations is maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for a large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.