Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells
Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells
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DOI：
10.1063/1.1647275
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发表时间：
2004-02-16
影响因子：
4
通讯作者：
Kishino, K
中科院分区：
文献类型：
--
作者：
Hamazaki, J;Matsui, S;Kishino, K
在室温下，利用简并泵浦探测技术研究了GaN/AlN多量子阱中子带间跃迁的动力学。发现弛豫动力学由超快（类似于140秒）和慢速（类似于1.3秒）组成。我们估计布鲁斯特结构的三阶磁化率近似于5.5x10(-18) m(2)/V-2，这表明当光束平行于井时，其值近似于2.2x10(-16) m(2)/V-2。(C) 2004年美国物理研究所。
Using a degenerate pump-probe technique on the Brewster configuration at room temperature, we investigate the dynamics of the intersubband transition in GaN/AlN multiple-quantum wells. The relaxation dynamics is found to consist of ultrafast (similar to140 fs) and slower (similar to1.3 ps) components. We estimate the third-order susceptibility for the Brewster configuration to be similar to5.5x10(-18) m(2)/V-2, which indicates that its value becomes similar to2.2x10(-16) m(2)/V-2 when a light beam is parallel to the well. (C) 2004 American Institute of Physics.