Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20nm
Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20nm
复制标题
由低至 20nm 的 SiOx 纳米鳍定义的短沟道单层 MoS2 场效应晶体管
DOI：
10.1088/1361-6528/ab13cc
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发表时间：
2019
期刊：
影响因子：
3.5
通讯作者：
Duan Huigao
中科院分区：
文献类型：
--
作者：
Bi Kaixi;Liu Huaizhi;Chen Yiqin;Luo Fang;Shu Zhiwen;Lin Jun;Liu Song;Liu Huawei;Zeng Zanyang;Dai Peng;Zhu Mengjian;Duan Huigao
具有合适带隙的过渡金属二卤化物(TMD)等层状半导体弥补了石墨烯的零带隙缺陷，显示出后硅互补金属氧化物半导体技术的巨大潜力。在TMD家族中，二硫化钼(MoS2)以其原子厚度薄、禁带宽度大、机械和化学稳定性好等优点而备受关注。然而，目前的纳米加工技术很难同时满足短沟道和方便制备的要求。在这里，我们展示了一种简单而有效的方法来制备沟道长度小于20 nm的短沟道化学气相沉积(CVD)单层MoS2场效应管(FET)。基于高分辨率负色调倍半硅氧烷电子抗蚀剂的电子束光刻被用来产生20 nm宽的SiO x线，定义了短沟道长度。2 0 nm MoS2场效应管的导通电流大于10 0μAμm−1，相应的室温电流通断比达到10 5。结合CVD方法的大规模生长，我们的结果将为基于原子薄的二维半导体的短沟器件的应用铺平道路。
Layered semiconductors such as transition metal dichalcogenides (TMDs) with proper bandgaps complement the zero-bandgap drawback of graphene, demonstrating great potential for post-silicon complementary metal-oxide-semiconductor technology. Among the TMD family, molybdenum disulfide (MoS 2) is highly attractive for its atomically thin body, large bandgap and decent mechanical and chemical stability. However, current nanofabrication techniques hardly satisfy the requirements of short channel and convenient preparation simultaneously. Here, we demonstrate a simple and effective approach to fabricate short channel chemical vapor deposition (CVD) monolayer MoS 2 field-effect transistors (FET) with channel length down to 20 nm. Electron-beam lithography based on high-resolution negative-tone hydrogen silsesquioxane electron resists were applied to create 20 nm wide SiO x lines, defining the short channel length. The 20 nm MoS 2 FET displays ON-sate current in excess of 100 μA μm− 1. The corresponding current ON/OFF ratio at room temperature reaches 10 5. We carefully studied the short channel effect of as-fabricated MoS 2 FETs. Combining with the large-scale growth of CVD method, our results will pave a way for short channel device applications based on atomically thin two-dimensional semiconductors.