Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition
Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition
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DOI：
10.1016/s0955-2219(03)00382-0
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发表时间：
2004
影响因子：
5.7
通讯作者：
H. Miyazaki;T. Goto;Y. Miwa;T. Ohno;Hisao Suzuki;T. Ota;Minoru Takahashi
中科院分区：
文献类型：
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作者：
H. Miyazaki;T. Goto;Y. Miwa;T. Ohno;Hisao Suzuki;T. Ota;Minoru Takahashi
采用化学溶液沉积法在硅衬底上制备了LaNiO(LNO)薄膜。通过改变前驱体溶液的浓度来控制LNO薄膜的取向。所得二氧化锂薄膜的电阻率为1.82x-2.57×10−3Ωcm。得到的0.3M-LNO薄膜表面平坦，高度(100)取向，具有1.85×10−3Ωcm的低电阻率。在所制得的0.3M-LNO电极上制备了PbZr0.53Ti0.47O，样品具有良好的铁电性能。
LaNiO3(LNO) thin films were prepared onto Si substrate by chemical solution deposition. The orientation of the LNO films was controlled by changing concentration of precursor solution. The resistivity of the resultant LNO films was 1.82 – 2.57×10−3Ωcm. The obtained 0.3 M-LNO film was flat surface, highly (100) orientation, and had a low resistivity of 1.85×10−3Ωcm. PbZr0.53Ti0.47O3was fabricated onto the resultant 0.3 M-LNO electrode, and the sample showed a good ferroelectric property.