Optical Kerr Signals Markedly Enhanced by Increasing Quality Factor in a GaAs/ AlAs Multilayer Cavity
Optical Kerr Signals Markedly Enhanced by Increasing Quality Factor in a GaAs/ AlAs Multilayer Cavity
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通过提高 GaAs/AlAs 多层腔中的品质因数显着增强光学克尔信号
DOI：
10.1143/jjap.50.04dg02
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发表时间：
2011
影响因子：
1.5
通讯作者：
Toshiro Isu
中科院分区：
文献类型：
--
作者：
Ken Morita;Tomoya Takahashi;Takahiro Kitada;Toshiro Isu
利用时间分辨光学测量，证明了在GaAs/AlAs多层腔中，随着品质(Q)因子的增加，光学Kerr信号显著增强。在光学克尔测量中，利用波长受限光学系统将激光脉冲的光谱宽度很好地调谐到腔模的峰值。虽然30对腔的Q仅是26对腔的1.6倍，但30对腔的光克尔信号强度是26对腔的10倍。结果表明，由于腔模光具有较强的内部光场和较长的光子寿命，由于非线性相移的增强，GaAsAlAs多层腔的光学Kerr信号显著增强，与Q4成正比。
Optical Kerr signals markedly enhanced by increasing quality (Q) factor in a GaAs/AlAs multilayer cavity have been demonstrated using time-resolved optical measurements. In the optical Kerr measurements, the spectral width of a laser pulse was well tuned to the peak of the cavity mode using the wavelength-restricted optical system. Although the Q of a 30-pair cavity is only 1.6 times larger than that of a 26-pair cavity, the optical Kerr signal intensity of the 30-pair cavity is 10 times larger than that of the 26-pair cavity. We have revealed that the optical Kerr signal of the GaAs/AlAs multilayer cavity is markedly enhanced nearly proportional to the Q 4 as a result of the enhanced nonlinear phase shift owing to the strong internal optical field and the long photon lifetime of the cavity-mode light.