Solution-deposited CuIn(S,Se)2 absorber layers from metal chalcogenides
Solution-deposited CuIn(S,Se)2 absorber layers from metal chalcogenides
复制标题
DOI：
10.1109/pvsc.2015.7356369
复制
发表时间：
2015-06
期刊：
影响因子：
--
通讯作者：
Panagiota Arnou;C. Cooper;A. Malkov;J. Walls;J. Bowers
中科院分区：
文献类型：
--
作者：
Panagiota Arnou;C. Cooper;A. Malkov;J. Walls;J. Bowers
采用金属硫族化物前驱体溶液制备了CuIn（S，Se）2（CISS）薄膜。该方法涉及将金属硫属化物溶解在由乙二胺和乙二硫醇组成的溶剂组合中，并且其用作基于肼的方法的更安全的替代方案。沉积材料的表征证实了具有良好晶体生长的CISS黄铜矿相的存在。CISS器件以玻璃/Mo/CISS/CdS/i-ZnO/AZO结构完成，功率转换效率为6%。使用更安全的溶剂混合物和避免复杂的前体合成可以潜在地导致用于CIGS的可行的和工业上可扩展的沉积方法。
CuIn(S,Se)2 (CISS) thin films were deposited using metal chalcogenide precursor solutions. This process involves the dissolution of metal chalcogenides in a solvent combination comprised of ethylenediamine and ethanedithiol and it serves as a safer alternative to the hydrazine-based approach. The characterization of the deposited material verifies the presence of the CISS chalcopyrite phase with good crystal growth. CISS devices were completed in a glass/Mo/CISS/CdS/i-ZnO/AZO configuration with power conversion efficiencies of 6%. The use of a safer solvent mixture and the avoidance of a complicated precursor synthesis can potentially result in a feasible and industrially scalable deposition methodology for CIGS.