Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics
Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics
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DOI：
10.1126/science.1104173
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发表时间：
2004-12
期刊：
影响因子：
56.9
通讯作者：
A. Ziegler;A. Ziegler;J. Idrobo;M. Cinibulk;C. Kisielowski;N. Browning;N. Browning;R. Ritchie;R. Ritchie
中科院分区：
文献类型：
--
作者：
A. Ziegler;A. Ziegler;J. Idrobo;M. Cinibulk;C. Kisielowski;N. Browning;N. Browning;R. Ritchie;R. Ritchie
获得的直接原子分辨率图像说明了一系列稀土原子如何结合到先进氮化硅陶瓷中晶间相和基体晶粒之间的界面上。人们发现，每个稀土原子在不同的位置与界面结合，具体取决于原子尺寸、电子构型以及界面处氧的存在。这是了解这些陶瓷机械性能起源的关键因素，并将在未来实现精确定制，从而在广泛的应用中显着提高材料的性能。
Direct atomic resolution images have been obtained that illustrate how a range of rare-earth atoms bond to the interface between the intergranular phase and the matrix grains in an advanced silicon nitride ceramic. It has been found that each rare-earth atom bonds to the interface at a different location, depending on atom size, electronic configuration, and the presence of oxygen at the interface. This is the key factor to understanding the origin of the mechanical properties in these ceramics and will enable precise tailoring in the future to critically improve the materials' performance in wide-ranging applications.