Refracted X-rays propagating near the surface under grazing incidence condition☆
Refracted X-rays propagating near the surface under grazing incidence condition☆
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掠入射条件下近地表传播的折射X射线☆
DOI：
10.1016/s0584-8547(98)00192-x
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
K. Matsushige
中科院分区：
文献类型：
--
作者：
K. Hayashi;J. Kawai;Y. Moriyama;T. Horiuchi;K. Matsushige
在掠入射条件下使用白色入射 X 射线测量穿过硅晶片和有机薄膜 n-C33H68/Si 的 X 射线折射。当探测器（固态探测器）的位置改变时，简单的斯涅尔定律可以很好地解释硅晶片折射的 X 射线束的能量变化。另一方面，从有机薄膜观察到两束折射X射线束。穿过硅衬底传播的一束光束的能量变化遵循斯涅尔定律，而另一束光束的能量变化则不遵循斯涅尔定律，并且当探测器位置改变时变化很小。
X-ray refractions through a silicon wafer and an organic thin film, n-C33H68/Si, were measured using white incident X-rays under a grazing incidence condition. The energy variation of a refracted X-ray beam by a silicon wafer was well explained by the simple Snell's law when the position of the detector (solid-state detector) was changed. On the other hand, two refracted X-ray beams were observed from the organic thin film. The energy variation of one beam which propagated through the silicon substrate followed Snell's law, while that of another beam did not and changed little when the detector position was varied.