Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating
Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating
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在旋转基底且无外部基底加热的情况下生长致密、坚硬且低应力的 Ti0.40Al0.27W0.33N 纳米复合材料薄膜
DOI：
10.1116/1.5140357
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发表时间：
2020-01
影响因子：
2.9
通讯作者：
Greczynski Grzegorz
中科院分区：
文献类型：
--
作者：
Wu Zhengtao;Tengstr;Olof;Bakhit Babak;Lu Jun;Greene J. E.;Hultman Lars;Petrov Ivan;Greczynski Grzegorz
W+照射的TiAlN是用来证明生长的致密，硬，和无应力的耐火氮化物涂层，在反应磁控溅射过程中没有外部加热。采用高功率脉冲和直流混合磁控共溅射（HiPIMS和DCMS）技术，在六阴极溅射系统中采用旋转衬底的方法，在Si（001）衬底上制备了Ti0.40Al0.27W0.33N纳米复合薄膜。由HiPIMS供电的两个W靶用作高能W+离子的脉冲源，其入射通量通过原位时间和能量分辨质谱分析，而其余四个靶（两个元素Ti靶和两个具有Al塞的Ti板）在DCMS模式（W-HiPIMS/TiAl-DCMS）中操作，以提供金属原子的连续通量并维持高沉积速率。负衬底偏压Vs仅与每个HiPIMS脉冲的富含W+离子的部分同步地施加，以便通过W+离子暴露之间沉积的TiAlN层的重离子照射来提供膜致密化。选择W用于致密化是由于其高质量和与N2的相对低的反应性，从而使靶中毒最小化，同时增强气体稀疏。致密的Ti 0.40 Al 0.27 W 0.33 N合金薄膜，在没有外部衬底加热的情况下生长（由于来自等离子体的热负荷，衬底温度Ts低于150 °C）和Vs = 500 V，表现出H = 23.1 GPa的纳米压痕硬度和E = 378 GPa的弹性模量，其分别为，比在相同条件下生长的欠致密DCMS Ti 0.58Al 0.42N薄膜高210%和40%。W离子轰击不影响膜的应力状态，这是压缩和低在1.2 GPa.W+照射的TiAlN是用来证明生长的致密，硬，和无应力的耐火氮化物涂层，在反应磁控溅射过程中没有外部加热。采用高功率脉冲和直流混合磁控共溅射（HiPIMS和DCMS）技术，在六阴极溅射系统中采用旋转衬底的方法，在Si（001）衬底上制备了Ti0.40Al0.27W0.33N纳米复合薄膜。由HiPIMS供电的两个W靶用作高能W+离子的脉冲源，其入射通量通过原位时间和能量分辨质谱分析，而其余四个靶（两个元素Ti靶和两个具有Al塞的Ti板）在DCMS模式（W-HiPIMS/TiAl-DCMS）中操作，以提供金属原子的连续通量并维持高沉积速率。负衬底偏压Vs仅与每个HiPIMS脉冲的W+离子富集部分同步施加，以便通过重离子辐照TiAlN层沉积来提供膜致密化。
W+ irradiation of TiAlN is used to demonstrate growth of dense, hard, and stress-free refractory nitride coatings with no external heating during reactive magnetron sputtering. Ti0.40Al0.27W0.33N nanocomposite films are deposited on Si(001) substrates using hybrid high-power impulse and dc magnetron cosputtering (HiPIMS and DCMS) in an industrial sputtering system employing substrate rotation during film growth from six cathodes. Two W targets powered by HiPIMS serve as a pulsed source of energetic W+ ions with incident fluxes analyzed by in situ time- and energy-resolved mass spectroscopy, while the remaining four targets (two elemental Ti targets and two Ti plates with Al plugs) are operated in the DCMS mode (W-HiPIMS/TiAl-DCMS) to provide a continuous flux of metal atoms and sustain a high deposition rate. A negative substrate bias Vs is applied only in synchronous with the W+-ion-rich portion of each HiPIMS pulse in order to provide film densification by heavy-ion irradiation of the TiAlN layers deposited between W+-ion exposures. W is selected for densification due to its high mass and relatively low reactivity with N2, thus minimizing target poisoning while enhancing gas rarefaction. Dense Ti0.40Al0.27W0.33N alloy films, grown with no external substrate heating (substrate temperature Ts lower than 150 °C due to heat load from the plasma) and Vs = 500 V, exhibit a nanoindentation hardness of H = 23.1 GPa and an elastic modulus of E = 378 GPa, which are, respectively, 210% and 40% higher than for reference underdense DCMS Ti0.58Al0.42N films grown under the same conditions, but without W+ irradiation. The W ion bombardment does not affect the film stress state, which is compressive and low at 1.2 GPa.W+ irradiation of TiAlN is used to demonstrate growth of dense, hard, and stress-free refractory nitride coatings with no external heating during reactive magnetron sputtering. Ti0.40Al0.27W0.33N nanocomposite films are deposited on Si(001) substrates using hybrid high-power impulse and dc magnetron cosputtering (HiPIMS and DCMS) in an industrial sputtering system employing substrate rotation during film growth from six cathodes. Two W targets powered by HiPIMS serve as a pulsed source of energetic W+ ions with incident fluxes analyzed by in situ time- and energy-resolved mass spectroscopy, while the remaining four targets (two elemental Ti targets and two Ti plates with Al plugs) are operated in the DCMS mode (W-HiPIMS/TiAl-DCMS) to provide a continuous flux of metal atoms and sustain a high deposition rate. A negative substrate bias Vs is applied only in synchronous with the W+-ion-rich portion of each HiPIMS pulse in order to provide film densification by heavy-ion irradiation of the TiAlN layers depos...