Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal–insulator–semiconductor structures
Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal–insulator–semiconductor structures
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DOI：
10.7567/apex.10.121005
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发表时间：
2017-11
影响因子：
2.3
通讯作者：
Yu-Han Liang;E. Towe
中科院分区：
文献类型：
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作者：
Yu-Han Liang;E. Towe
富三氮化铝基深紫外（275 ~ 320 nm）发光二极管存在发射效率低、导通电压高的问题。我们报道了富Al (Al,Ga)N金属绝缘体-半导体紫外发光肖特基二极管，其导通电压< 3v，约为典型（Al,Ga）N p-i-n二极管的一半。我们的器件采用薄AlN薄膜作为绝缘体，n型Al0.58Ga0.42N薄膜作为半导体。为了提高效率，我们在AlN绝缘体和n型AlxGa1−xN半导体之间插入了GaN量子阱结构。量子阱结构的好处包括调节发射波长的潜力和限制载流子的能力，以实现更有效的辐射重组。
Al-rich III–nitride-based deep-ultraviolet (UV) (275–320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal–insulator–semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p–i–n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type AlxGa1−xN semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.