Growth of silicon nanowires by electron beam evaporation using indium catalyst
Growth of silicon nanowires by electron beam evaporation using indium catalyst
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使用铟催化剂通过电子束蒸发生长硅纳米线
DOI：
10.1016/j.matlet.2011.08.064
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发表时间：
2012
影响因子：
3
通讯作者：
A. R. Phani
中科院分区：
文献类型：
--
作者：
R. R. Kumar;K. N. Rao;A. R. Phani
首次在300°C的低衬底温度下使用电子束蒸发在铟（In）涂覆的Si（100）衬底上生长了硅纳米线。标准的光谱和显微镜技术已被用于生长的硅纳米线的结构，形态和成分特性。在15min的沉积时间下，生长的Si纳米线具有随机取向，平均长度为600nm。生长的Si纳米线已经显示出在其顶部的铟纳米颗粒（加盖），这证实了气液固（VLS）生长机制。透射电子显微镜（TEM）的测量结果表明，纯和单晶的Si纳米线的性质。所获得的结果表明，寻找替代催化剂的硅纳米线的合成金的良好进展。
For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using e-beam evaporation at a low substrate temperature of 300°C. Standard spectroscopic and microscopic techniques have been employed for the structural, morphological and compositional properties of as grown Si nanowires. The as grown Si nanowires have randomly oriented with an average length of 600nm for a deposition time of 15min. As grown Si nanowires have shown indium nanoparticle (capped) on top of it confirming the Vapor Liquid Solid (VLS) growth mechanism. Transmission Electron Microscope (TEM) measurements have revealed pure and single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires.