Hybrid Class-E low dv/dt rectifier for high frequency inductive power transfer
Hybrid Class-E low dv/dt rectifier for high frequency inductive power transfer
复制标题
用于高频感应电力传输的混合 E 类低 dv/dt 整流器
DOI：
--
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
P. Mitcheson
中科院分区：
文献类型：
--
作者：
G. Kkelis;D. Yates;P. Mitcheson
本文介绍了一种电压驱动混合型e类低dv/dt半波整流器的设计与实现，重点是高频（HF）， 3 - 30mhz，感应功率传输（IPT）。混合整流器能够吸收所使用二极管的寄生电容，同时保持具有串联电容器的传统e类整流器的特性。混合整流器引入了两个设计自由度，可以在广泛的IPT要求下进行电路优化。研究了三种输入（交流）和输出（直流）电阻相同的混合整流器设计的性能。在整个测试输出功率范围（50 W至200 W）内，所有设计都能容忍二极管寄生，因为它们保持几乎恒定的效率和输入电阻曲线。效率和输入电阻曲线的最坏情况偏差分别为4%和7%。当部署14.5 a电流能力的SiC肖特基二极管时，最低记录的接收端效率为91%，最高记录的接收端效率大于95%。
This paper presents the design and implementation of a voltage driven hybrid Class-E low dv/dt half wave rectifier with focus on high frequency (HF), 3 - 30 MHz, inductive power transfer (IPT). The hybrid rectifier is capable of absorbing the parasitic capacitance of the utlised diode while maintaining the properties of the conventional Class-E rectifier with a series capacitor. The hybrid rectifier introduces two degrees of design freedom which enable circuit optimisation over a wide range of IPT requirements. A case study investigated the performance of three different hybrid rectifier designs of the same input (AC) and output (DC) resistance. All designs proved to be tolerant to diode parasitics as they maintained nearly constant efficiency and input resistance profiles over the entire tested output power range (50 W to 200 W). The worst case deviations in efficiency and input resistance profiles were 4 % and 7 % respectively. The lowest recorded receiving end efficiency was 91 % and the highest was greater than 95 %, when a 14.5 A current capability SiC Schottky diode was deployed.