High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer
High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer
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DOI：
10.1063/1.1866638
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发表时间：
2005-02
影响因子：
4
通讯作者：
K. Cho;N. Park;Taeyoub Kim;Kyung‐Hyun Kim;G. Sung;J. Shin
中科院分区：
文献类型：
--
作者：
K. Cho;N. Park;Taeyoub Kim;Kyung‐Hyun Kim;G. Sung;J. Shin
利用等离子体增强化学气相沉积技术，在氮化硅基体中嵌入硅纳米晶（nc-Si），制备了具有透明掺杂层的发光二极管。在室温下，在正向偏压条件下，观察到峰值波长约为600 nm的橙子电致发光。EL的峰值位置与光致发光（PL）的峰值位置非常相似，并且所发射的EL强度与通过器件的电流密度成比例。我们认为所观察到的电致发光起源于nc-Si中的电子-空穴对复合。通过使用铟锡氧化物和n型SiC层组合作为透明掺杂层，我们获得了大于1.6%的高外量子效率。
We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was observed at room temperature. The peak position of the EL is very similar to that of the photoluminescence (PL) and the emitted EL intensity is proportional to the current density passing through the device. We suggest that the observed EL is originated from electron-hole pair recombination in nc-Si. By using indium tin oxide and n-type SiC layer combination as a transparent doping layer, we obtained high external quantum efficiency greater than 1.6%.