Active tuning of surface phonon polariton resonances via carrier photoinjection
Active tuning of surface phonon polariton resonances via carrier photoinjection
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DOI：
10.1038/s41566-017-0069-0
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发表时间：
2018-01-01
期刊：
影响因子：
35
通讯作者：
Caldwell, Joshua D.
中科院分区：
文献类型：
--
作者：
Dunkelberger, Adam D.;Ellis, Chase T.;Caldwell, Joshua D.
表面声子极化激元（SPhPs）是红外等离子体激元的有吸引力的替代品，用于红外光的亚衍射限制。半导体纳米谐振器中的局部SPhP谐振是窄的，但是该线宽和Reststrahlen带的有限范围限制了光谱覆盖。为了解决这一限制，我们报告主动调谐的InP和4 H-SiC中的SPhP共振光注入自由载流子到纳米谐振器，利用载流子等离子体和光学声子之间的耦合蓝移SPhP共振。我们展示了国家的最先进的调谐数字的优点后，连续波激发（在InP）或脉冲激发（在4 H-SiC）。寿命效应导致调谐在InP中饱和，并且载流子再分布导致快速（
Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor nanoresonators are narrow, but that linewidth and the limited extent of the Reststrahlen band limit spectral coverage. To address this limitation, we report active tuning of SPhP resonances in InP and 4H-SiC by photoinjecting free carriers into nanoresonators, taking advantage of the coupling between the carrier plasma and optic phonons to blueshift SPhP resonances. We demonstrate state-of-the-art tuning figures of merit upon continuous-wave excitation (in InP) or pulsed excitation (in 4H-SiC). Lifetime effects cause the tuning to saturate in InP, and carrier redistribution leads to rapid (