Cationic chemistry and chemically amplified resist materials for microlithography: synthesis and applications of copolymers of 4-(1-hydroxy-1-methylethyl)styrene and styrene or 4-hydroxystyrene
Cationic chemistry and chemically amplified resist materials for microlithography: synthesis and applications of copolymers of 4-(1-hydroxy-1-methylethyl)styrene and styrene or 4-hydroxystyrene
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用于微光刻的阳离子化学和化学放大抗蚀剂材料：4-(1-羟基-1-甲基乙基)苯乙烯和苯乙烯或4-羟基苯乙烯共聚物的合成和应用
DOI：
10.1016/0032-3861(94)90041-8
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
J. Fréchet
中科院分区：
文献类型：
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作者：
M. Yoshida;J. Fréchet
本文设计并合成了两种新型的4-（1-羟基-1-甲基乙基）苯乙烯与苯乙烯或4-羟基苯乙烯的共聚物，用作微光刻中的高分辨率抗蚀剂材料。这些共聚物中所含的叔苄醇部分在通过稳定的碳正离子中间体进行的过程中经历酸催化的脱水，导致共聚物的最终交联。掺入这些共聚物的抗蚀剂制剂通过使用光酸产生剂如三苯基锍六氟锑酸盐容易地获得。用深紫外光或电子束照射抗蚀剂膜导致聚合物膜的暴露区域内质子的释放。随后加热曝光的膜提供了脱水和交联步骤进行所需的活化能。新共聚物的设计使得在抗蚀剂图像的溶剂显影时看不到交联聚合物的溶胀，因为交联区域的极性由于脱水步骤而急剧改变。该抗蚀剂对深紫外线和电子束辐射具有极高的灵敏度，可用作成像材料。
Two new copolymers based on 4-(1-hydroxy-1-methylethyl)styrene and styrene or 4-hydroxystyrene have been designed and prepared for use as ultrahigh resolution resist materials in microlithography. The tertiary benzylic alcohol moieties contained in these copolymers undergo acid-catalysed dehydration in a process that proceeds via a stabilized carbenium intermediate, leading to the eventual crosslinking of the copolymers. Resist formulations incorporating these copolymers are readily obtained through the use of a photoacid generator such as triphenylsulfonium hexafluoroantimonate. Irradiation of a film of the resist with deep-u.v. light or an electron beam results in the liberation of protons within the exposed areas of the polymer film. Subsequent heating of the exposed film provides the activation energy that is necessary for the dehydration and crosslinking steps to proceed. The design of the new copolymers is such that no swelling of the crosslinked polymers is seen upon solvent development of the resist images as the polarity of the crosslinked areas is changed drastically as a result of the dehydration step. The resists show extremely high sensitivities to both deep-u.v. and electron-beam radiation and are useful as imaging materials.