Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy
Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy
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DOI：
10.1063/1.4961414
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发表时间：
2016-08
影响因子：
3.2
通讯作者：
C. Kaspari;M. Pristovsek;W. Richter
中科院分区：
文献类型：
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作者：
C. Kaspari;M. Pristovsek;W. Richter
我们用原位反射各向异性光谱和原位椭圆偏振光谱研究了几种（001）Ⅲ-Ⅴ族半导体在金属有机物气相外延中的脱氧过程。如果存在氢或V族前体，则一旦kBT达到晶体的键强度的1/15，氧化物脱附就开始。氧化层厚度首先减小，然后表面缓慢重建。在一定温度下，氧化层厚度的减小符合二级反应。我们在InAs和GaAs上发现了两个过程，但在InP上只有一个过程。在V族通量下，在InAs、GaAs和InP上去除外延准备氧化物的活化能分别为0.64 eV、1.1 eV和1.3 eV。氧化物脱附的结束是通过去除最后的富金属氧化物来确定的，对于InAs/InP，温度为500 °C，对于GaAs/GaP，温度为600 °C。
We studied the deoxidation of several (001) III–V semiconductors in metal-organic vapour phase epitaxy using in-situ reflectance anisotropy spectroscopy and in-situ spectroscopic ellipsometry. The oxide desorption started as soon as kBT reaches 1/15th of the bond strength of the crystal if there is hydrogen or group V precursor present. The oxide thickness decreases first and afterwards the surface slowly reconstructs. At a constant temperature the oxide thickness decreased according to a second order reaction. We found two processes on InAs and GaAs, but only a single one on InP. The activation energy for the removal of epi-ready oxide under group V flux was 0.64 eV, 1.1 eV, and 1.3 eV on InAs, GaAs, and InP, respectively. The end of oxide desorption is determined by the removal of the last metal rich oxides, at temperatures of 500 °C for InAs/InP and 600 °C for GaAs/GaP.