Epitaxial growth of Sc2O3 films on Gd2O3-buffered Si substrates by pulsed laser deposition
Epitaxial growth of Sc2O3 films on Gd2O3-buffered Si substrates by pulsed laser deposition
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通过脉冲激光沉积在 Gd2O3 缓冲的 Si 衬底上外延生长 Sc2O3 薄膜
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
B. Luther
中科院分区：
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作者：
Joseph Paulraj;Rong;M. Sellars;B. Luther
摘要为了研制能改善体晶体梯度回波量子存储器性能的波导器件，我们研究了用脉冲激光沉积技术在Gd2O3缓冲硅基片上制备高质量Sc2O3薄膜的最佳条件。
在最佳条件下，X射线衍射图谱中只出现氧化物峰和Si（222）峰。Sc2O3（222）衍射峰位于2θ = 31.5°，半高宽为0.16°，摇摆曲线的半高宽为0.10°。通过X射线极图证实了面内外延关系，其中Sc2O3（111）平行于Si（111）。高分辨透射电镜图像显示界面清晰，晶格图像完美，电子衍射点尖锐。所有这些结果证实了Si上的氧化膜是高质量的单晶。
AbstractWe investigated the optimal conditions to prepare high-quality Sc2O3 films on Gd2O3-buffered Si wafers using pulsed laser deposition technique with an aim at developing waveguide devices that can transform the performance of the gradient echo quantum memory based on bulk crystals.
Under the optimal conditions, only oxide and Si (2 2 2) peaks appeared in the X-ray diffraction pattern. The Sc2O3 (2 2 2) diffraction peak was located at 2θ = 31.5° with a full width at half maxima (FWHM) of 0.16°, and its rocking curve had a FWHM of 0.10°. In-plane epitaxial relationship was confirmed by X-ray pole figure where Sc2O3 (1 1 1) was parallel to Si (1 1 1). High-resolution TEM images indicated clear interfaces and perfect lattice images with sharp electron diffraction dots. All these results confirm that the oxide films on Si were single crystalline with high quality.