X-ray absorption studies on cubic boron nitride thin films
X-ray absorption studies on cubic boron nitride thin films
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DOI：
10.1063/1.2405717
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发表时间：
2007-01
影响因子：
3.2
通讯作者：
X. Zhou;T. Sham;Wenjun Zhang;C. Chan;I. Bello;Shui-Tong Lee;H. Hofsäss
中科院分区：
文献类型：
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作者：
X. Zhou;T. Sham;Wenjun Zhang;C. Chan;I. Bello;Shui-Tong Lee;H. Hofsäss
通过硼和氮K边缘角分辨X射线吸收近边缘结构在总电子产额和荧光产额模式下研究了在硅和金刚石涂层硅衬底上通过各种高能物质辅助物理气相沉积和化学气相沉积技术合成的立方氮化硼（c-BN）薄膜。 X 射线吸收光谱可用于研究薄膜结构、部分有序乱层 (t-BN) 和非晶 (a-BN) sp2 杂化 BN 相的数量和分布，以及 t-BN∕a-BN 比率。发现c-BN和基底之间的界面处的t-BN基面的优选方向垂直于或接近垂直于基底。金刚石涂层Si衬底上沉积的c-BN薄膜中sp2键合BN的含量显着降低。研究了 c-BN 薄膜相对于块体六方 BN 和 c-BN 的电子结构的修饰，并且还回避了 c-BN 薄膜的结晶度。
Cubic boron nitride (c-BN) films synthesized by various energetic species assisted physical vapor deposition and chemical vapor deposition techniques on Si and diamond-coated Si substrates have been investigated by boron and nitrogen K-edge angle-resolved x-ray absorption near-edge structure in both total electron yield and fluorescence yield modes. X-ray absorption spectrum has been developed to study the film structure, the quantity and distribution of the partially ordered turbostratic (t-BN) and amorphous (a-BN) sp2-hybridized BN phases, and the t-BN∕a-BN ratios. The preferred direction of the t-BN basal planes at the interface between c-BN and substrate is found to be normal or nearly normal to the substrate. The content of the sp2-bonded BN in the c-BN films deposited on diamond-coated Si substrates reduces remarkably. The modifications of the electronic structure of the c-BN films with respect to bulk hexagonal BN and c-BN have been investigated and the crystallinity of c-BN films has also been eva...