Aging in ferroelectrics
Aging in ferroelectrics
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DOI：
10.1111/j.1551-2916.2005.00663.x
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发表时间：
2006-01-01
影响因子：
3.9
通讯作者：
Balke, N
中科院分区：
文献类型：
--
作者：
Lupascu, DC;Genenko, YA;Balke, N
缺陷偶极子的重定向和自由载流子的漂移是引起铁电体老化效应的最突出的微观机制。考虑到晶界对多晶材料的影响，对这两种机制进行了对比。对于漂移模型，畴壁上的夹紧压力仅取决于几何形状和移动缺陷电荷载流子的输运性质，而不依赖于其电子或离子性质。作为一个数值例子，在BaTiO3中确定了由于氧空位漂移而产生的夹紧压力。其范围为10(6)~ 10(7)Pa，与实验值相对应。
The reorientation of defect dipoles and the drift of free charge carriers are the most prominent microscopic mechanisms under discussion to provoke the aging effect in ferroelectrics. These two mechanisms are contrasted taking into account the influence of grain boundaries in a polycrystalline material. For the drift model, clamping pressures on domain walls only depend on geometry and on the transport properties of the mobile defect charge carrier independent of its electronic or ionic nature. For a numerical example clamping pressures as a result of drift of oxygen vacancies are determined in BaTiO3. They range from 10(6) to 10(7) Pa corresponding to experimental values.