Effects of interfacial layer structures on crystal structural properties of ZnO films
Effects of interfacial layer structures on crystal structural properties of ZnO films
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DOI：
10.1116/1.2821741
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发表时间：
2008-01-01
影响因子：
2.9
通讯作者：
Chang, J. H.
中科院分区：
文献类型：
--
作者：
Park, J. S.;Minegishi, T.;Chang, J. H.
通过等离子体辅助分子束外延，在 (0001) Al2O3 衬底上的 Cr 化合物缓冲层上生长单晶 ZnO 薄膜。在减少 ZnO 和基底之间的晶格失配方面，研究了 CrN 和 Cr2O3/CrN 缓冲剂。 ZnO 薄膜的结构和光学质量表明 Cr 化合物缓冲剂在 (0001) Al2O3 基板上生长高质量 ZnO 薄膜的可行性。此外，还研究了界面结构对不同极性ZnO薄膜选择性生长的影响。 Zn 极性 ZnO 薄膜在岩盐 CrN 缓冲液上生长，菱形 Cr2O3 的形成导致 O 极性薄膜的生长。提出了极性转换的可能机制。通过采用简单的图案化和再生长过程，制造了横向周期性极性转换结构。极性敏感的压电响应显微镜图像和压电响应曲线的相反滞后特性清楚地证实了极性的周期性变化，这是极性控制方法的有效性以及周期性极性控制ZnO结构的成功制造的严格证据。 (C) 2008 年美国真空协会。
Single crystalline ZnO films were grown on Cr compound buffer layers on (0001) Al2O3 substrates by plasma assisted molecular beam epitaxy. In terms of lattice misfit reduction between ZnO and substrate, the CrN and Cr2O3/CrN buffers are investigated. The structural and optical qualities of ZnO films suggest the feasibility of Cr compound buffers for high-quality ZnO films growth on (0001) Al2O3 substrates. Moreover, the effects of interfacial structures on selective growth of different polar ZnO films are investigated. Zn-polar ZnO films are grown on the rocksalt CrN buffer and the formation of rhombohedral Cr2O3 results in the growth of O-polar films. The possible mechanism of polarity conversion is proposed. By employing the simple patterning and regrowth procedures, a periodical polarity converted structure in lateral is fabricated. The periodical change of the polarity is clearly confirmed by the polarity sensitive piezo response microscope images and the opposite hysteretic characteristic of the piezo response curves, which are strict evidences for the validity of the polarity controlling method as well as the successful fabrication of the periodical polarity controlled ZnO structure. (C) 2008 American Vacuum Society.