Structural and electrical properties of Pb(Zr0.53Ti0.47)O3 films prepared on La0.5Sr0.5CoO3 coated Si substrates
Structural and electrical properties of Pb(Zr0.53Ti0.47)O3 films prepared on La0.5Sr0.5CoO3 coated Si substrates
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DOI：
10.1016/j.jeurceramsoc.2009.05.007
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发表时间：
2010
影响因子：
5.7
通讯作者：
Feng Chen;Jinrong Cheng;Shenwen Yu;Z. Meng
中科院分区：
文献类型：
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作者：
Feng Chen;Jinrong Cheng;Shenwen Yu;Z. Meng
在La0.5Sr0.5CoO_3(LSCO)衬底上制备了厚度为0.9μm的PbZr0.53Ti0.47O(PZT)薄膜。采用溶胶-凝胶法制备了PZT和LSCO。LSCO溶胶的浓度在0.3~0.1mol/L之间变化，可以改变PZT薄膜的择优取向，从而影响薄膜的介电性能和铁电性能。较低的溶胶浓度(0.1mol/L)制备的LSCO电极层具有更致密的结构，这有利于(100)织构的PZT薄膜的形成，柱状晶均匀致密。在优化的LSCO薄膜上制备的PZT薄膜的介电常数和剩余极化分别提高了980和20μC/cm~2。
PbZr0.53Ti0.47O3(PZT) thin films with thickness of 0.9μm were prepared on La0.5Sr0.5CoO3(LSCO) coated Si substrates. Both PZT and LSCO were prepared by the sol–gel method. The concentration of LSCO sol was varied from 0.3 to 0.1mol/L, which could modify the preferential orientation of PZT thin films and consequently affect the dielectric and ferroelectric properties. The LSCO electrode layers derived from lower sol concentration of 0.1mol/L have much more densified structure, which facilitates the formation of (100) textured PZT films with smooth and compact columnar grains. PZT thin films prepared on the optimized LSCO films exhibit the enhanced dielectric constant and remnant polarization of 980 and 20μC/cm2, respectively.