Correlation between photoluminescence and infrared absorption spectra of oxidized nanoscale silicon clusters
Correlation between photoluminescence and infrared absorption spectra of oxidized nanoscale silicon clusters
复制标题
氧化纳米硅簇的光致发光与红外吸收光谱的相关性
DOI：
10.1063/1.367041
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发表时间：
1998
影响因子：
3.2
通讯作者：
P. Sercel
中科院分区：
文献类型：
--
作者：
R. Lowe;Hao Lee;Jay B. Ewing;S. R. Collins;Weidong Yang;P. Sercel
我们报道了纳米硅团簇在氢原子、分子氧和湿化的Ar中的原位光致发光和非原位傅立叶变换红外光谱。对新鲜样品和老化样品的红外吸收光谱的比较表明，光致发光效率与化学计量比的氧化物壳层和核心/氧化物界面上存在的硅悬键钝化剂有关。光致发光猝灭在暴露于原子氢时有效地使样品发光，并在随后暴露于空气时恢复光致发光。光致发光猝灭和恢复与界面硅烷基团的部分猝灭和吸收恢复有关。光致发光和红外吸收光谱之间的关联，以及氢猝灭的结果，证明了这些样品中的辐射复合与界面氧化物相关的缺陷有关。
We report in situ photoluminescence and ex situ Fourier transform infrared spectra of nanoscale silicon clusters exposed to atomic hydrogen, molecular oxygen, and humidified argon. Comparisons between infrared absorption spectra of fresh and aged samples indicate that photoluminescence efficiency is correlated with a stoichiometric oxide shell and the presence of Si dangling bond passivants at the core/oxide interface. Photoluminescence quenching is demonstrated in efficiently luminescing samples upon exposure to atomic hydrogen with recovery of photoluminescence occurring upon subsequent exposure to air. The photoluminescence quenching and recovery is correlated with a partial quenching and recovery of absorption due to interfacial silane groups. The correlations between photoluminescence and infrared absorption spectra, together with the hydrogen quenching results, provide evidence that radiative recombination in these samples is associated with interfacial oxide-related defects.