Formation and Destruction of Silicon Monoxide in SN 1987A
Formation and Destruction of Silicon Monoxide in SN 1987A
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SN 1987A 中一氧化硅的形成和破坏
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
A. Dalgarno
中科院分区：
文献类型：
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作者：
Weihong Liu;A. Dalgarno
我们在 SN 1987A 中提出了一种新的一氧化硅分子化学模型。它通过辐射缔合提高了形成速率，并通过 SiO2 与 Ar+ 和 Ne+ 之间的电荷转移提高了破坏速率，这比先前模型中的高能电子碰撞电离和解离更有效。结论不变，即 SN 1987A 中观察到的 10−4–10−3 M☉ SiO 可以通过化学模型产生，其中氦气没有微观混合到喷射物的硅氧区域中。
We present a new chemistry model for the silicon monoxide molecules in SN 1987A. It incorporates an enhanced rate of formation by radiative association and an enhanced rate of destruction through charge transfer between SiO and Ar+ and Ne+, which is more efficient than the energetic electron impact ionization and dissociation in a previous model. The conclusion is unchanged that the 10−4–10−3 M☉ of SiO observed in SN 1987A can be produced by chemistry models in which there is no microscopic mixing of helium into the silicon-oxygen region of the ejecta.