Deep ion-beam lithography for micromachining applications
Deep ion-beam lithography for micromachining applications
复制标题
用于微加工应用的深离子束光刻
DOI：
10.1117/12.280533
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
F. Watt
中科院分区：
文献类型：
--
作者：
S. V. Springham;T. Osipowicz;J. L. Sanchez;Sing Lee;F. Watt
LIGA及其定义工艺深X射线光刻是加工高深宽比微结构的重要方法，目前正在研究各种应用。该技术的一个局限性与对加工结构的3D形状的限制基本上为棱柱形几何形状相关。关于制造用于深X射线光刻的合适掩模的其它技术问题与可以使用电子束光刻来图案化的抗蚀剂的有限厚度以及用于产生较厚掩模的介入X射线光刻步骤中的二次辐射引起的抗蚀剂的不期望的曝光相关联。使用高能光离子的聚焦束的深光刻工艺具有克服深X射线光刻中固有的许多几何限制的潜力。深离子bema光刻的另一种用途是图案化厚抗蚀剂层，用于生产用于深x射线光刻的掩模。本文报道了一种利用2.0MeV质子束进行直径约1 μ m的深离子束曝光系统的研制进展。给出了深离子束光刻制作厚DXL掩模的计算机模拟结果。
LIGA and its defining process deep x-ray lithography, is an important method for machining high-aspect ratio microstructures, and a diverse range of applications are presently being investigated. One limitation of the technique is associated with the restriction on the 3D shape of the machined structures to essentially prismatic geometry. Further technical problems concerning the fabrication of a suitable mask for deep x-ray lithography are associated with the limited thickness of resist which can be patterned using electron beam lithography, and the undesirable exposure of resist by secondary radiations in an intervening x-ray lithography step which is used to produce a thicker mask. A deep lithography process using a focused beam of high energy light ions has the potential to overcome many of the geometrical restrictions inherent in deep x-ray lithography. An alternative use of deep ion bema lithography is to pattern a thick resist layer for the production of masks for deep x-ray lithography. This paper reports progress on the development of a system for deep ion bema lithography using a scanned 2.0 MeV proton beam of approximately 1 micron diameter. The result of computer simulations of the capabilities of deep ion beam lithography for the fabrication of thick DXL masks is presented.