p-channel germanium MOSFETs with high channel mobility
p-channel germanium MOSFETs with high channel mobility
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DOI：
10.1109/55.29667
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发表时间：
1989-07
影响因子：
4.9
通讯作者：
Suzanne C. Martin;L. Hitt;James J. Rosenberg
中科院分区：
文献类型：
--
作者：
Suzanne C. Martin;L. Hitt;James J. Rosenberg
本文报道了具有氮化天然氧化栅绝缘体的p沟道锗mosfet的制备及其性能。采用了一种适合电路集成的自对准虚门工艺。共源特性没有环路，室温通道迁移率峰值为770 cm/sup 2//V-s。这些结果进一步证明了高性能锗CMOS技术是可能的
The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm/sup 2//V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.>