Local Charge Storage in Thin Silicon Oxide Films: Mechanisms and Possible Applications
Local Charge Storage in Thin Silicon Oxide Films: Mechanisms and Possible Applications
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DOI：
10.1021/jp308632n
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发表时间：
2013-03
影响因子：
3.7
通讯作者：
C. Maedler;H. Graaf
中科院分区：
文献类型：
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作者：
C. Maedler;H. Graaf
我们报道了微米级以下的二氧化硅中的电荷存储，这是控制带电粒子附着所需的。利用导电原子力显微镜对氧化硅薄膜进行了局部充电。利用开尔文探针力显微镜对电荷进行了研究。我们发现，电荷存储在氧化硅基质中的不同陷阱中。我们还发现了两条不同的衰变路径：一条平行于表面，一条垂直于表面。由吸附在表面的水介导的平行路径被疏水单分子层抑制。这导致了氧化物中存储的电荷的稳定，从而使离子物种能够从溶液中定向附着。作为概念的证明，我们首次将染料分子选择性地沉积到先前在二氧化硅上写入的电荷图案上。
We report on charge storage in silicon oxide below the micrometer scale as needed for the controlled attachment of charged particles. Thin silicon oxide films were locally charged using conductive atomic force microscopy. The charge was investigated using Kelvin probe force microscopy. We found that charges are stored in different traps in the silicon oxide matrix. We also discovered two different decay pathways: one parallel and one perpendicular to the surface. The parallel path, which is mediated by water adsorbed on the surface, was suppressed by a hydrophobic monolayer. This led to a stabilization of the stored charges in the oxide, which enabled the targeted attachment of ionic species from solution. As proof of concept, we deposited dye molecules selectively to previously written charge patterns on silicon oxide for the first time.