STOICHIOMETRY-DEPENDENT DEEP LEVELS IN P-TYPE INP
STOICHIOMETRY-DEPENDENT DEEP LEVELS IN P-TYPE INP
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P 型 INP 中化学计量相关的深层水平
DOI：
10.1063/1.345618
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发表时间：
1990
影响因子：
3.2
通讯作者：
K. Suto
中科院分区：
文献类型：
--
作者：
J. Nishizawa;Kiyoon Kim;Y. Oyama;K. Suto
采用光电容测量方法研究了在700 °C下退火4 h制备的Zn掺杂p型InP晶体中深能级的化学计量比依赖性。光电容结果揭示了三个主要的深层次。退火前后在价带上方1.05 eV处检测到一个占主导地位的深能级，并将能级密度的变化示为磷蒸气压的函数。另外两个深能级也检测退火后在价带以上0.74 eV和导带以下0.51 eV。鉴于偏离InP的化学计量组成，这些能级的可能来源和它们的光学跃迁机制进行了讨论。
Photocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels in p-type InP crystals doped with Zn prepared by 4 h annealing at 700 °C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep level at 1.05 eV above the valence band is detected commonly before and after annealing, and the change of level densities is shown as a function of the phosphorus vapor pressure. Another two deep levels are also detected after annealing at 0.74 eV above the valence band and at 0.51 eV below the conduction band. In view of the deviation from the stoichiometric composition of InP, possible origins of these levels and their optical transition mechanism are discussed.