Intensity modulated photoeffects in InP-MIS capacitors
Intensity modulated photoeffects in InP-MIS capacitors
复制标题
InP-MIS 电容器中的强度调制光效应
DOI：
10.1049/ip-opt:19960389
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
P. Chakrabarti
中科院分区：
文献类型：
--
作者：
M. Madheswaran;P. Chakrabarti
本文从理论上研究了强度调制光照明对InP MIS电容特性的影响。在所建立的模型的基础上，发现MIS电容器的电容可以通过强度调制光信号来控制。在强反转下的器件的电容取决于光功率以及调制频率。该光控电容器可以用在振荡器的储能电路中，用于将强度调制的光信号转换成相应的频率调制的电信号。由于载流子的平均寿命值较低，与传统的硅MOS电容器相比，该器件可以在更宽的频率范围内使用。
The effect of intensity modulated optical illumination on the characteristics of an InP-MIS capacitor has been examined theoretically in the paper. On the basis of the model developed, it has been found that the capacitance of the MIS capacitor can be controlled by an intensity modulated optical signal. The capacitance of the device under strong inversion depends on the optical power as well as the modulation frequency. This optically controlled capacitor can be used in the tank circuit of an oscillator for converting an intensity modulated optical signal into a corresponding frequency modulated electrical signal. Due to a low value of mean lifetime of the carriers, the device can be used over a wider range of frequency compared to conventional silicon MOS capacitors.