Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis
Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis
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DOI：
10.1063/1.4910510
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发表时间：
2015-02
影响因子：
4
通讯作者：
T. Sekimoto;Shuichi Shinagawa;Yusuke Uetake;K. Noda;M. Deguchi;S. Yotsuhashi;K. Ohkawa
中科院分区：
文献类型：
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作者：
T. Sekimoto;Shuichi Shinagawa;Yusuke Uetake;K. Noda;M. Deguchi;S. Yotsuhashi;K. Ohkawa
我们报道了一种使用InGaN和两个Si - p-n结的串联光电极（TPE）的高度改进的CO2到HCOOH转换系统。为了提高其效率，采用窄带隙InGaN作为光吸收层。在TPE结构中，氮化镓基光吸收层与两个Si p-n结之间的电流匹配是提高效率的关键。HCOOH的能量转换效率达到0.97%，高于全球生物光合效率的平均值。
We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.