A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
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一种将等离子体激发区与刻蚀工艺区分开的新型微波激发等离子体刻蚀设备
DOI：
10.1143/jjap.42.1887
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
T. Goto;M. Hirayama;H. Yamauchi;M. Moriguchi;S. Sugawa;T. Ohmi
研制了一种新型的微波激励等离子体刻蚀设备。该设备采用了低电子温度和高密度等离子体源，使用径向线缝隙天线和新开发的金属淋浴头的蚀刻气体供应到低电子温度扩散等离子体区域，以控制气体的分解。通过调节施加到天线的微波功率和施加到晶片台的射频功率，可以单独地控制到晶片的离子通量和离子能量。使用C5F8成功地蚀刻了SiO2中100 nm宽的接触孔。通过使用气体喷淋头将C5F8引入到蚀刻处理区域中，提高了对抗蚀剂的蚀刻选择性，这表明抑制了C5F8的过度分解。
A new microwave-excited plasma etching equipment has been developed. The equipment adopts a low-electron temperature and high-density plasma source using a radial line slot antenna and a newly developed metal shower head for etching gas supply into the low-electron temperature diffusion plasma region in order to control the decomposition of gasses. Ion flux and ion energy to a wafer can be individually controlled by adjusting the microwave power applied to the antenna and the rf power applied to the wafer stage. Contact holes of 100 nm wide in SiO2 were successfully etched using C5F8. Etching selectivity to the resist was improved by introducing C5F8 into the etching process region using the gas shower head, which indicates that excess decomposition of C5F8 is suppressed.