Single Crystal Growth of CaFeO3 at High Pressure
Single Crystal Growth of CaFeO3 at High Pressure
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CaFeO3 高压单晶生长
DOI：
10.2497/jjspm.48.715
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Takano
中科院分区：
文献类型：
--
作者：
S. Ishiwata;M. Azuma;Takashi Saito;S. Kawasaki;M. Takano
以KClO4、NaCl和CaCl2的混合物为助熔剂和氧化剂，在4.5 GPa高压下合成了CaFeO3单晶。电阻率的温度依赖性显示出在 295 K 时的金属绝缘转变，对应于电荷歧化。在 115 K 时观察到螺旋旋转型反铁磁转变。这些结果表明晶体不存在氧缺陷。高压下同步加速器辐射的能量色散粉末 X 射线衍射研究表明，水分对于 CaFeO3 晶体生长是必需的。
Single crystals of CaFeO3 have been synthesized at high pressure of 4.5 GPa with a mixture of KClO4, NaCI and CaCl2 as flux and oxidizing agent. The temperature dependence of the resistivity showed a metal-insurating transition at 295 K, corresponding to the charege disproprotionation. A screw-spin type antiferromagnetic transition was observed at 115 K. These results indicated that the crystals were free from oxygen defect. Energy-dispersive powder X-ray diffraction study with synchrotron radiation at high pressure revealed that a moisture was necessary to crystal growth of CaFeO3.