Enhancement of anisotropic magnetoresistance in MgO/NiFe/MgO trilayers via NiFe nanoparticles in MgO layers
Enhancement of anisotropic magnetoresistance in MgO/NiFe/MgO trilayers via NiFe nanoparticles in MgO layers
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DOI：
10.1063/1.4729273
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发表时间：
2012-06
影响因子：
3.2
通讯作者：
J. Huangfu;Chong-Jun Zhao;Jingyan Zhang;Baohe Li;Guang-Hua Yu
中科院分区：
文献类型：
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作者：
J. Huangfu;Chong-Jun Zhao;Jingyan Zhang;Baohe Li;Guang-Hua Yu
MgO/NiFe/MgO 三层膜是高灵敏度各向异性磁阻 (AMR) 传感器薄膜材料的新发展，在较小的 NiFe 厚度下表现出严重降低的磁阻比。通过将超薄NiFe(І)层插入MgO/NiFe/MgO三层膜的顶部和底部MgO层中，设计并合成了MgO/NiFe(І)/MgO/NiFe/MgO/NiFe(І)/MgO结构的薄膜。由于 NiFe/MgO 界面上电子的镜面反射得到改善，因此 NiFe 薄膜的 AMR 值可以显着提高。对于MgO/NiFe(І)(1.5 nm)/MgO/NiFe(5 nm)/MgO/NiFe(І)(1.5 nm)/MgO结构的NiFe薄膜，AMR值大幅提高至2.71%，比MgO/NiFe(5 nm)/MgO薄膜提高了37%。
MgO/NiFe/MgO trilayers, the new development in highly sensitive anisotropic magnetoresistance (AMR) sensor film materials, exhibit severely reduced magnetoresistance ratios at small NiFe thicknesses. By inserting ultrathin NiFe(І) layers into the top and bottom MgO layers of MgO/NiFe/MgO trilayers, films with a structure of MgO/NiFe(І)/MgO/NiFe/MgO/NiFe(І)/MgO were designed and synthesized. The AMR value can be significantly enhanced for thin NiFe films due to the improved specular reflections of electrons at both NiFe/MgO interfaces. For a thin NiFe film with the structure of MgO/NiFe(І)(1.5 nm)/MgO/NiFe(5 nm)/MgO/NiFe(І)(1.5 nm)/MgO, the AMR value was greatly enhanced to as high as 2.71%, an increase of 37% over MgO/NiFe(5 nm)/MgO film.