Magnetologic with alpha-MnAs thin films.
Magnetologic with alpha-MnAs thin films.
复制标题
α-MnAs 薄膜的磁学。
DOI：
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发表时间：
2003
影响因子：
8.6
通讯作者：
K. Ploog
中科院分区：
文献类型：
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作者：
C. Pampuch;A. Das;A. Ney;L. Däweritz;R. Koch;K. Ploog
在当今的计算中利用自旋信息有望大大提高效率。MnAs是一种很有前途的铁磁材料，可与半导体兼容，用于室温应用。通过灵敏的悬臂梁磁强计，我们发现GaAs（001）衬底上的α-MnAs薄膜表现出一个额外的小的面外磁化分量，该分量与主要的面内磁化分量磁耦合。我们证明，通过将这两个组件作为独立的输入，α-MnAs层可以用作具有非易失性输出的逻辑门。该层的逻辑功能可以在运行时预先选择为AND或OR，从而为可编程磁逻辑器件提供了前景。
Taking advantage of the spin information in present day computing is expected to yield an enormous increase in efficiency. A promising ferromagnetic material compatible with semiconductors for room temperature applications is MnAs. By sensitive cantilever beam magnetometry, we discovered that alpha-MnAs films on GaAs(001) exhibit an additional small out-of-plane component of the magnetization which is magnetically coupled with the dominant in-plane magnetization. We demonstrate that by regarding the two components as independent inputs, the alpha-MnAs layer can be utilized as a logic gate with nonvolatile output. The logic functionality of the layer can be preselected to be AND or OR at run time, thus offering the perspective for programmable magnetologic devices.