Single crystal study on UNi0.5Sb2
Single crystal study on UNi0.5Sb2
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DOI：
10.1016/j.intermet.2004.04.039
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发表时间：
2004-12-01
期刊：
影响因子：
4.4
通讯作者：
Troc, R
中科院分区：
文献类型：
--
作者：
Bukowski, Z;Kaczorowski, D;Troc, R
从富Sb熔体中生长出Unit-xSb_2单晶，并通过X射线衍射、磁输运和电输运测量进行了研究。晶体结构细化表明在四重HfCuSi 2型晶胞中过渡金属位点上的显著缺陷，产生实际组成UNi 0.5Sb 2。研究的单晶反铁磁低于T-N = 161 K，并表现出另一个相变在T-t = 60 K，大概是由自旋重定向。在10 K时没有观察到晶体结构畸变。在T-N以上，电阻率由近藤效应主导，而在较低温度下，它显示出反铁磁体的行为特征。UNi0.5Sb 2的整体磁和电输运性质在有序态和顺磁态都是高度各向异性的。(C)2004爱思唯尔有限公司保留所有权利。
Single crystals of UNit-xSb2 have been grown from an Sb-rich melt and studied by means of X-ray diffraction, magnetic and electrical transport measurements. Crystal structure refinements indicated significant deficiency on the transition metal sites in the tetragonal HfCuSi2-type unit cell, yielding the actual composition UNi0.5Sb2. The single crystals studied order antiferromagnetically below T-N = 161 K and exhibit another phase transition at T-t = 60 K, presumably caused by a spin-reorientation. No crystal structure distortion could be detected at 10 K. Above T-N the electrical resistivity is dominated by a Kondo effect, whereas at lower temperatures it shows a behavior characteristic of antiferromagnets. The overall magnetic and electrical transport properties of UNi0.5Sb2 are highly anisotropic both in the ordered and paramagnetic states. (C) 2004 Elsevier Ltd. All rights reserved.