Anisotropic epitaxial lateral growth in GaN selective area epitaxy
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
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DOI：
10.1063/1.119626
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发表时间：
1997-09-01
影响因子：
4
通讯作者：
Mishra, UK
中科院分区：
文献类型：
--
作者：
Kapolnek, D;Keller, S;Mishra, UK
使用线性掩模特征研究了 GaN 选择性外延期间发生的外延横向掩模过度生长，横向生长在 30 度角跨度上在最大值和最小值之间变化，并表现出六角对称性。垂直生长遵循相反的趋势，横向生长最大值和垂直生长最小值发生在平行于 GaN 的线上 [10.0]。横向生长的大变化也可以通过生长温度和 NH3 流量的变化来获得。在适当的生长条件下，可以实现高达 4.1 的横向与垂直生长速率比，从而导致显着的横向掩模过度生长和特征合并，而无需过多的生长时间。 (C) 1997 年美国物理研究所。
Epitaxial lateral mask overgrowth which occurs during GaN selective epitaxy has been studied using linear mask features, The lateral growth varies between its maximum and minimum over a 30 degrees angular span and exhibits hexagonal symmetry, Vertical growth follows an opposite trend, with lateral growth maxima, and vertical growth minima occurring for lines parallel to the GaN [10.0]. Large variations in the lateral growth are also obtained through variations in the growth temperature and NH3 flow. Under proper growth conditions, lateral to vertical growth rate ratios of up to 4.1 can be achieved, resulting in significant lateral mask overgrowth and coalescence of features without excessive growth times. (C) 1997 American Institute of Physics.