A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB
A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB
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0.044mm2 0.5 至 7GHz 电阻加源跟随器反馈降噪 LNA，实现 3.3±0.45 dB 的平坦 NF
DOI：
10.1109/tcsii.2018.2833553
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
R. Martins
中科院分区：
文献类型：
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作者：
Haohong Yu;Yong Chen;C. Boon;Chenyang Li;Pui;R. Martins
提出了一种结合电阻反馈和源极跟随器反馈的宽带噪声抵消低噪声放大器。SFF有助于放大反馈电阻，以提高增益和噪声系数（NF），而不会影响输入阻抗匹配。另一个好处是反馈电阻和噪声消除晶体管的噪声贡献显著降低。该LNA采用65 nm CMOS工艺制造，电压增益为16.8 dB，平坦NF为3.3 ± 0.45 dB，−3 dB带宽为0.5至7 GHz。功耗为11.3 mW，在1.2 V，和管芯面积为0.044 mm2。
A wideband noise-cancelling low-noise amplifier (LNA) combining resistor feedback and source-follower feedback (SFF) is proposed. The SFF facilitates upsizing of the feedback resistor to improve the gain and noise figure (NF), without compromising the input-impedance matching. Another benefit is that the noise contributions of both the feedback resistor and noise-cancelling transistors are significantly reduced. Fabricated in 65-nm CMOS, the LNA exhibits a voltage gain of 16.8 dB, and a flat NF of 3.3 ± 0.45 dB over a −3-dB bandwidth of 0.5 to 7 GHz. The power consumption is 11.3 mW at 1.2 V, and the die area is 0.044 mm2.