Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
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双极性 GaAs/AlGaAs 双层器件中吸引和排斥库仑相互作用介导的阻力之间的切换
DOI：
10.1063/1.4941760
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发表时间：
2015
影响因子：
4
通讯作者：
D. A. Ritchie
中科院分区：
文献类型：
--
作者：
B. Zheng;A. Croxall;J. Waldie;K. D. Gupta;K. D. Gupta;F. Sfigakis;I. Farrer;H. Beere;D. A. Ritchie
我们提出了双极 GaAs/AlGaAs 双量子阱结构中库仑阻力的测量，该结构可以配置为电子-空穴双层和空穴-空穴双层，两个量子阱之间的绝缘势垒仅为 10 nm。库仑阻力系数是层间粒子-粒子相互作用强度的直接测量。我们探索了低载流子密度的强相互作用机制（2D 相互作用参数 rs 高达 14）。我们的双极器件设计可以比较吸引电子-空穴和排斥空穴-空穴相互作用的影响，并显示 GaAs 中不同有效质量的电子和空穴的影响。
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter rs up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses of electrons and holes in GaAs.