Performance of 3-D architecture silicon sensors after intense proton irradiation
Performance of 3-D architecture silicon sensors after intense proton irradiation
复制标题
强质子辐照后 3D 结构硅传感器的性能
DOI：
10.1109/23.960351
复制
发表时间：
2001
影响因子：
1.8
通讯作者：
C. Kenney
中科院分区：
文献类型：
--
作者：
S. Parker;C. Kenney
具有三维结构的硅探测器，其中的n-和p-电极穿透整个衬底，已被成功地制造。电极可以彼此分开小于衬底厚度的距离，从而允许短收集路径、低耗尽电压和来自快速电荷收集的大电流信号。虽然在最初的制造过程中没有采取特殊的硬化步骤，但三维结构的这些特征对辐射损伤的影响产生了内在的抵抗力。给出了一些性能测量的探测器，完全耗尽和工作后，暴露于质子束的剂量相当于从略多于十年的B层半径（50毫米）在计划中的阿特拉斯探测器在欧洲核子研究中心的大型强子对撞机。
Silicon detectors with a three-dimensional architecture, in which the n- and p-electrodes penetrate through the entire substrate, have been successfully fabricated. The electrodes can be separated from each other by distances that are less than the substrate thickness, allowing short collection paths, low depletion voltages, and large current signals from rapid charge collection. While no special hardening steps were taken in this initial fabrication run, these features of three dimensional architectures produce an intrinsic resistance to the effects of radiation damage. Some performance measurements are given for detectors that are fully depleted and working after exposures to proton beams with doses equivalent to that from slightly more than ten years at the B-layer radius (50 mm) in the planned Atlas detector at the Large Hadron Collider at CERN.