Thickness-dependent in situ studies of trap states in pentacene thin film transistors
Thickness-dependent in situ studies of trap states in pentacene thin film transistors
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DOI：
10.1063/1.3309685
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发表时间：
2010-02-22
影响因子：
4
通讯作者：
Nickel, Bert
中科院分区：
文献类型：
--
作者：
Fiebig, Matthias;Beckmeier, Daniel;Nickel, Bert
在这封信中，我们提出了在原位运输测量并五苯薄膜晶体管，特别是迁移率的演变，阈值电压，并五苯的沉积过程中的滞后与亚单层精度的调查。我们观察到这两个，一个强大的阈值电压的正移和减少的滞后高达四个单层的标称并五苯膜厚度。除了先前公布的体积电子陷阱状态，占阈值电压漂移，我们建议，位于自由并五苯表面的浅并五苯陷阱状态的存在解释了滞后的减少。
In this letter, we present in situ transport measurements of pentacene thin film transistors, particularly investigations of the evolution of mobility, threshold voltage, and hysteresis during the deposition of pentacene with submonolayer precision. We observe both, a strong positive shift of the threshold voltage and a reduction in the hysteresis up to a nominal pentacene film thickness of four monolayers. In addition to previously published volume electron trap states that account for the threshold voltage shift, we suggest that the existence of shallow pentacene trap states located at the free pentacene surface explains the reduction of the hysteresis.