Eradicated unintentional incorporated donor-type impurities of ZnO
Eradicated unintentional incorporated donor-type impurities of ZnO
复制标题
消除了无意掺入的 ZnO 施主型杂质
DOI：
10.1063/1.5022998
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发表时间：
2018-03-01
期刊：
影响因子：
1.6
通讯作者：
Shen, Dezhen
中科院分区：
文献类型：
--
作者：
Xie, Xiuhua;Li, Binghui;Shen, Dezhen
杂质控制是半导体掺杂的关键。通过对污染源的系统分析，我们确定了生长过程中无意掺杂氧化锌（ZnO）薄膜的残余电子来源于无意掺杂的硅，而硅是通过分子束外延生长的。同时，确定在氮掺杂过程中引入了不可预见的供体型杂质（硼、碳、氯和氟）。通过对污染源进行表面钝化处理，这些供体类型的杂质被控制在可容忍的水平。无意掺杂ZnO薄膜的剩余电子浓度降低到1 × 1015 cm-3，迁移率为155 cm2/V·s。氮掺杂ZnO薄膜具有p型电导率，空穴浓度为2 × 1016 cm-3，迁移率为10 cm2/V·s。我们的研究结果为进一步研究p型掺杂ZnO提供了坚实的基础。
Impurity control is essential for semiconductor doping. Through the systematic analysis of pollution sources, we determined that the residual electrons of as-grown unintentional doped zinc oxide (ZnO) films were derived from the unintentional incorporation of silicon, which grown by molecular beam epitaxy. At the same time, it was determined that unforeseen donor-type impurities (boron, carbon, chlorine and fluorine) were introduced during the nitrogen doping process. By subjecting the sources of the contamination to a surface passivation process, these donor-type impurities are controlled at a tolerable level. The residual electrons concentration of the unintentional doped ZnO film was lowered to 1 × 1015 cm-3, and the mobility was 155 cm2/V·s. Nitrogen-doped ZnO films exhibited p-type conductivity, with a hole concentration of 2 × 1016 cm-3 and a mobility of 10 cm2/V·s. Our results provide a pure foundation for further research on p-type doping of ZnO.