Frequency-Dependent Piezoresistive Effect in Top-down Fabricated Gold Nanoresistors
Frequency-Dependent Piezoresistive Effect in Top-down Fabricated Gold Nanoresistors
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自上而下制造的金纳米电阻器中频率相关的压阻效应
DOI：
10.1021/acs.nanolett.1c01733
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发表时间：
2021
期刊：
影响因子：
10.8
通讯作者：
Ekinci, Kamil L.
中科院分区：
文献类型：
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作者：
Ti, Chaoyang;Ari, Atakan B.;Karakan, M. Çağatay;Yanik, Cenk;Kaya, Ismet I.;Hanay, M. Selim;Svitelskiy, Oleksiy;González, Miguel;Seren, Huseyin;Ekinci, Kamil L.
压阻应变计可以以高保真度电子读出机械变形。随着压阻应变计的尺寸不断缩小以适应纳米技术的应用，研究它们在不同极限下的物理属性变得至关重要。在这里，我们描述了一种用于研究金薄膜纳米电阻器的压阻应变系数与频率的关系的实验方法。纳米电阻器是在纳米机械双钳梁谐振器的锚附近通过光刻方法制造的。当谐振器以其一种正常模式驱动谐振时，纳米电阻器会受到 4–36 MHz 范围内 ε ≲ 10–5 的频率相关应变的影响。我们使用光学干涉测量法校准应变，并使用射频混合技术测量电阻变化。我们的光刻金纳米电阻器的压阻应变系数 γ 在 4 MHz 时为 γ ≈ 3.6，与之前作品中的宏观薄膜电阻器一致。然而，我们的 γ 值随频率单调增加，在 36 MHz 时达到 γ ≈ 15。我们讨论可能引起这种意想不到的频率依赖性的物理现象。
Piezoresistive strain gauges allow for electronic readout of mechanical deformations with high fidelity. As piezoresistive strain gauges are aggressively being scaled down for applications in nanotechnology, it has become critical to investigate their physical attributes at different limits. Here, we describe an experimental approach for studying the piezoresistive gauge factor of a gold thin-film nanoresistor as a function of frequency. The nanoresistor is fabricated lithographically near the anchor of a nanomechanical doubly clamped beam resonator. As the resonator is driven to resonance in one of its normal modes, the nanoresistor is exposed to frequency-dependent strains of ε ≲ 10–5in the 4–36 MHz range. We calibrate the strain using optical interferometry and measure the resistance changes using a radio frequency mix-down technique. The piezoresistive gauge factor γ of our lithographic gold nanoresistors is γ ≈ 3.6 at 4 MHz, in agreement with comparable macroscopic thin metal film resistors in previous works. However, our γ values increase monotonically with frequency and reach γ ≈ 15 at 36 MHz. We discuss possible physics that may give rise to this unexpected frequency dependence.