Challenges in the design of wideband GaN-HEMT based class-G RF-power amplifiers
Challenges in the design of wideband GaN-HEMT based class-G RF-power amplifiers
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基于宽带 GaN-HEMT 的 G 类射频功率放大器设计面临的挑战
DOI：
10.1109/gemic.2016.7461587
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
O. Bengtsson
中科院分区：
文献类型：
--
作者：
N. Wolff;W. Heinrich;O. Bengtsson
在基于GaN的功率放大器（PA）中，在连续波（CW）激励下的增益在宽功率范围内缓慢压缩。此外，由于GaN-HEMT中的记忆效应，具有变化包络的调制激励的增益不同于CW值。另一方面，基于CW测量的后处理的电源电压调制系统的设计方法被广泛使用。本文仔细研究了这些方法的情况下，G类调制PA在2.7 GHz，即PA与离散电源调制的研究。通过与动态测量进行比较，量化了与CW设计方法相关的误差。使用具有相等功率分布但调制带宽在4 MHz至32 MHz范围内变化的测试信号。它被发现，动态测量结果偏离预期的CW性能高达5%的PAE和1.5 dB的增益。造成这种情况的原因一方面是CW和调制增益的差异。另一方面，效率随着电源电压开关频率的增加而降低，这与调制带宽和电源电压电平有关。
In GaN-based power amplifiers (PA) the gain under continuous wave (CW) excitation compresses slowly over a wide power range. Also, due to memory-effects in the GaN-HEMT, the gain for modulated excitation with varying envelope differs from the CW value. On the other hand, design approaches for supply voltage modulated systems based on post-processing of CW measurements are in widespread use. This paper scrutinizes these approaches in a case study for a class-G modulated PA at 2.7 GHz, i.e. a PA with discrete supply modulation. The errors related to the CW design approach are quantified by comparison with dynamic measurements. Test-signals with equal power distributions but varying modulation bandwidths in a range of 4 MHz to 32 MHz are used. It is found that the dynamic measurement results deviate from the expected CW performance by up to 5% in PAE and 1.5 dB in gain. Responsible for this are on one hand differences in CW and modulated gain. On the other hand the efficiency degrades with increasing supply voltage switching frequency, which is related to the modulation bandwidth and the supply voltage levels.
离散电平电源调制射频功率放大器数字预失真的新模型
影响因子：
3
作者：
N. Wolff;W. Heinrich;O. Bengtsson
通讯作者：
O. Bengtsson