Wafer Fusion Technique Applied to GaN/GaN System
Wafer Fusion Technique Applied to GaN/GaN System
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晶圆融合技术应用于 GaN/GaN 系统
DOI：
10.1143/jjap.39.l572
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发表时间：
2000
影响因子：
1.5
通讯作者：
S. Noda
中科院分区：
文献类型：
--
作者：
Takashi Tokuda;S. Noda
首次将晶圆熔合技术应用于GaN/GaN系统。阐明了硅片成功熔合的工艺条件。成功熔合GaN/GaN的最低退火温度为500°C。结果发现，表面光滑度和一个大的加权压力是必不可少的，以实现均匀的界面和更好的再现性。并对熔融界面的电性能进行了表征。n-GaN/n-GaN和p-GaN/p-GaN熔合界面的电流-电压（I-V）特性表明，在熔合界面处存在费米能级的钉扎效应。
The wafer fusion technique is applied to a GaN/GaN system for the first time. The processing conditions for successful wafer fusion are clarified. The lowest annealing temperature for successful fusion of GaN/GaN is 500°C. It is found that surface smoothness and a large weighting pressure are essential to achieve both a uniform interface and better reproducibility. The electric property of the fused interface is also characterized. Current–voltage (I–V) characteristics of the n-GaN/n-GaN and p-GaN/p-GaN fused interface reveal that a pinning effect of the Fermi level exists at the fused interface.