Control of interlayer physics in 2H transition metal dichalcogenides
Control of interlayer physics in 2H transition metal dichalcogenides
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DOI：
10.1063/1.5005958
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发表时间：
2017-03
影响因子：
3.2
通讯作者：
Kuang-Chung Wang;T. Stanev;Daniel Valencia;J. Charles;A. Henning;V. Sangwan;A. Lahiri;Daniel F. Mejia
中科院分区：
文献类型：
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作者：
Kuang-Chung Wang;T. Stanev;Daniel Valencia;J. Charles;A. Henning;V. Sangwan;A. Lahiri;Daniel F. Mejia
它是在实验和理论上详细评估过渡金属二硫属化物的层间耦合如何控制各自的设备的电子性能。门控过渡金属二硫属化物结构显示电子和空穴要么局部化在单个单层，或离域超出多个层，这取决于自旋轨道相互作用和层间跳跃之间的平衡。这种平衡取决于层厚度、动量空间对称点和施加的栅极场。详细分析了这种平衡的设计范围、有效费米能级和所有相关的有效质量。一个很好的定量协议的预测和测量的量子限制斯塔克效应在门控二硫化钼系统揭示层内激子作为所观察到的光致发光的主要来源。
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers—depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.