Probing the Edges between Stability and Degradation of a Series of ZnSe‐Based Layered Hybrid Semiconductors
Probing the Edges between Stability and Degradation of a Series of ZnSe‐Based Layered Hybrid Semiconductors
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DOI：
10.1002/admi.202200347
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发表时间：
2021-07
影响因子：
5.4
通讯作者：
Mengwen Yan;Jeremy I. Feldblyum;A. Chen;Christopher A. Myers;Gregory John;V. Meyers
中科院分区：
文献类型：
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作者：
Mengwen Yan;Jeremy I. Feldblyum;A. Chen;Christopher A. Myers;Gregory John;V. Meyers
在过去十年中，发现具有潜在独特电学和化学性质的层状材料已成为材料研究的主要焦点。2D II-VI层状杂化材料（LHs）是一类受配体保护的层状材料，能够以少层形式隔离，并具有与半导体器件技术潜在相关的发射和电子特性。作者先前表明，类似于黑磷和过渡金属二硫族化物，2D II-VI LHs对环境大气条件敏感。然而，这些受配体保护的材料降解的原因尚不清楚。使用基于ZnSe的LHs，研究表明这些材料的稳定性与LH表面配位的有机配体的长度和化学性质有关。此外，暴露于同位素富集的H218O和18O2中表明，H2O和O2都是有助于ZnSe‐LH降解的反应物。提出了一种由水引发的降解途径，并得到了密度泛函理论计算的支持。这些发现有助于发现层状材料的保护策略，并阐明了一种可能也适用于其他层状材料的降解途径。
The discovery of layered materials with potentially unique electrical and chemical properties has become a major focus of materials research in the past decade. 2D II–VI layered hybrids (LHs) are a family of ligand‐protected layered materials capable of isolation in few‐layer form and possess emissive and electronic properties of potential relevance to semiconductor device technologies. The authors showed previously that, akin to black phosphorus and transition metal dichalcogenides, 2D II–VI LHs are sensitive to ambient atmospheric conditions. However, the causes for degradation of these ligand‐protected materials remain unclear. Using ZnSe‐based LHs, it is shown herein that the stability of these materials is related to the length and chemistry of the organic ligands coordinated to the LH surfaces. Furthermore, exposure to isotopically enriched H218O and 18O2 reveals that H2O and O2 are both reactants contributing to ZnSe‐LH degradation. An H2O‐initiated degradation pathway is proposed and is supported by density functional theory calculations. The findings contribute to the discovery of protection strategies for layered materials and elucidate a degradation pathway that may also be applicable to other layered materials.