Improving the vertical light extraction efficiency of GaN-based thin-film flip-chip LED with double embedded photonic crystals
Improving the vertical light extraction efficiency of GaN-based thin-film flip-chip LED with double embedded photonic crystals
复制标题
提高双嵌入式光子晶体 GaN 基薄膜倒装芯片 LED 的垂直光提取效率
DOI：
10.1109/jqe.2014.2379949
复制
发表时间：
2015
影响因子：
2.5
通讯作者：
Zhao Jia
中科院分区：
文献类型：
--
作者：
Qing-An Ding;Li Kang;Kong Fanmin;Zhao Jia
采用时域有限差分法研究了内嵌光子晶体的薄膜倒装发光二极管的垂直光提取效率。本文系统地分析了垂直LEE对垂直结构和嵌入的PhC参数的依赖性。结果表明，p侧和n侧嵌入式光子晶体的引入并没有明显破坏微腔的谐振效应.特别地，通过扫描双嵌入光子晶体参数，优化结构的垂直LEE得到了两倍的增强，并讨论了垂直LEE增强的物理机制。
The vertical light-extraction efficiency (LEE) of the thin-film flip-chip light-emitting diodes with the embedded photonic crystal (PhC) is investigated using the finite-difference time-domain method. This paper systematically analyzes the dependence of the vertical LEE on the vertical structure and the embedded PhC parameters. It is found that the introduction of the p-side embedded PhC and n-side embedded PhC does not significantly destroy the microcavity resonant effects. In particular, a twofolds enhancement in the vertical LEE is obtained for the optimized structure by scanning the double embedded PhCs parameters and the physical mechanisms for the enhancement of the vertical LEE are discussed.