Electrodeposition of 1.4-eV-Bandgap p-Copper (II) Oxide Film With Excellent Photoactivity
Electrodeposition of 1.4-eV-Bandgap p-Copper (II) Oxide Film With Excellent Photoactivity
复制标题
DOI：
10.1149/1.3614408
复制
发表时间：
2011-01-01
影响因子：
3.9
通讯作者：
Watase, Seiji
中科院分区：
文献类型：
--
作者：
Izaki, Masanobu;Nagai, Miho;Watase, Seiji
在297 K下，在含有硝酸铜和硝酸铵的碱性水溶液中，采用阳极电沉积法制备了带隙能量为1.4 eV的p型半导体CuO薄膜，并对其结构、光学和电学特性进行了表征.在透明导电玻璃基板上制备的无规取向CuO膜显示出电阻率为1.26 × 10（3）Ω cm、载流子浓度为2.11 × 10（16）cm（-3）、迁移率为0.234 cm（2）V-1 s（-1）的电特性，并且在光照射期间可以观察到轻微的光电流产生。（002）取向的CuO膜可以在（111）取向的Au/Si晶片衬底上制备，并且与随机取向的CuO膜相比具有大的光电流密度和快速响应的优异的光活性。(C)2011年电化学学会。[DOI：10.1149/1.3614408]保留所有权利。
A p-type semiconductor CuO film with a bandgap energy of 1.4 eV has been prepared by anodic electrodeposition in a basic aqueous solution containing copper nitrate hydrate and ammonium nitrate at 297 K, and the structural, optical, and electrical characterizations were carried out. The randomly-oriented CuO film prepared on a transparent conductive glass substrate showed electrical characteristics of a 1.26 x 10(3) Omega cm in resistivity, 2.11 x 10(16) cm(-3) in carrier concentration, and 0.234 cm(2) V-1 s(-1) in mobility, and a slight photocurrent generation could be observed during light irradiation. The (002)-oriented CuO film could be prepared on the (111)-oriented Au/Si wafer substrate and possessed an excellent photoactivity of a large photocurrent density and quick response compared to those for the randomly oriented CuO film. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3614408] All rights reserved.