A 32.75-Gb/s Voltage-Mode Transmitter With Three-Tap FFE in 16-nm CMOS
A 32.75-Gb/s Voltage-Mode Transmitter With Three-Tap FFE in 16-nm CMOS
复制标题
采用 16 nm CMOS 封装、具有三抽头 FFE 的 32.75 Gb/s 电压模式发送器
DOI：
10.1109/jssc.2017.2714180
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发表时间：
2017
影响因子：
5.4
通讯作者：
Ken Chang
中科院分区：
文献类型：
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作者：
Kok Lim Chan;Kee Hian Tan;Y. Frans;J. Im;P. Upadhyaya;Siok;A. Roldan;Nakul Narang;Chin Yang Koay;Hongyuan Zhao;P. Chiang;Ken Chang
本文介绍了一种采用16nm FinFET CMOS技术制造的具有三分路前馈均衡的32.75 gb /s电压模式发射机（TX）。TX采用双稳压器架构，允许独立控制输出摆幅、输出共模和均衡。提出了一种混合阻抗控制方案，其中使用驱动器片总数进行粗阻抗控制，使用基于模拟环的电压控制进行TX的细阻抗控制。还提出了一种有限脉冲响应补偿电路来补偿由于均衡引起的数据依赖电流。TX在0.9 v和1.2 v电源下消耗120.8 mW，提供0.25-0.9 Vpp的输出摆幅，在32.75 Gb/s下实现6.49 ps-pp的总抖动和220 fs-rms的随机抖动，误码率为1e-12。
This paper describes a 32.75-Gb/s voltage-mode transmitter (TX) with three-tap feed forward equalization that is fabricated in a 16-nm FinFET CMOS technology. The TX uses a dual regulator architecture to allow independent control of output swing, output common-mode, and equalization. A hybrid impedance control scheme is presented where the total number of driver slices is used for coarse impedance control, and analog loop-based voltage control is used for fine impedance control of the TX. A finite-impulse response compensation circuit to compensate for the data dependent current due to equalization is also presented. The TX consumes 120.8 mW with 0.9- and 1.2-V supplies, provides 0.25–0.9 Vpp output swing, and achieves total jitter of 6.49 ps–pp and random jitter of 220 fs–rms at 32.75 Gb/s with bit error rate of 1e-12.