Long wavelength interband cascade lasers
Long wavelength interband cascade lasers
复制标题
长波长带间级联激光器
DOI：
10.1063/5.0084565
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发表时间：
2022-02
影响因子：
4
通讯作者：
J. Massengale;Yixuan Shen;Rui Q. Yang;S. Hawkins;J. Klem
中科院分区：
文献类型：
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作者：
J. Massengale;Yixuan Shen;Rui Q. Yang;S. Hawkins;J. Klem
InAs基带间级联激光器（ICLs）比GaSb激光器更容易适应长波长工作。本文报道了两种新型的ICL晶片制作的器件，它们在降低ICL在11 μm附近的阈值电流密度和扩展ICL的工作波长到13 μm以上方面都有明显的改善。在80 K时，11 μm附近的ICL的连续波激光阈值为23 A/cm 2，而连续波激光输出功率明显高于之前报道的同类波长ICL。由第二个晶片制成的ICL包含一个创新的量子阱有源区，由InAsP层组成，并在13.2 μm的脉冲模式下发射高达120 K的激光，这是III-V族带间激光器实现的最长波长。
InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating wavelength beyond 13 μm. The ICLs near 11 μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm2 at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2 μm, which is the longest wavelength achieved for III–V interband lasers.